14/2/03 db91077m-aas/a2 'x' specific ation appro vals ll vde 0884 in 3 available lead forms : - - std - g form - smd approved to cecc 00802 description the h11d series of optically coupled isolators consist of infrared light emitting diode and npn silicon photo transistor in a standard 6 pin dual in line plastic package. fe atures l options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. l high isolation v oltage (5.3kv rms ,7.5kv pk ) l high bv cer ( 300v - h11d1, h11d2 ) ( 200v - h11d3, h11d4 ) l all electrical parameters 100% tested l custom electrical selections available applic ations l dc motor controllers l industrial systems controllers l measuring instruments l signal transmission between systems of different potentials and impedances h11d1x, h11d2x, h 11d3x, h 11d4x h11d1, h11d2, h 11d3, h 11d4 high vo lt age optical ly coupled isol ator phototransistor output absolute maximum r atings (25c unless otherwise specified) storage temperature -55c to + 150c operating temperature -55c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 60ma reverse v oltage 6v power dissipation 100mw output transistor collector-emitter v oltage bv cer (r be = 1m w ) h11d1, h11d2 300v h11d3, h11d4 200v collector-base v oltage bv cbo h11d1, h11d2 300v h11d3, h11d4 200v emitter-collector v oltage bv eco 6v power dissipation 150mw power dissi pa tion total power dissipation 250mw (derate linearly 2.67mw/ c above 25c) 0.26 0.5 dimensions in mm 7.0 6.0 1.2 7.62 3.0 13 max 3.35 4.0 3.0 2.54 7.62 6.62 0.5 1 3 4 6 2 5 option g 7.62 surface mount option sm 10.16 0.26 isocom components ltd unit 25b, park view road west, park v iew industrial estate, brenda road hartlepool, ts25 1yd england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://ww w .isocom.com 10.46 9.86 0.6 0.1 1.25 0.75
parameter min typ max units test condition input forward voltage (v f ) 1.2 1.5 v i f = 10ma reverse current (i r ) 10 m a v r = 6v output collector-emitter breakdown (bv cer ) h11d1, h11d2 300 v i c = 1ma, r be = 1m w h11d3, h11d4 200 v ( note 2 ) collector-base breakdown (bv cbo ) h11d1, h11d2 300 v i c = 100 m a h11d3, h11d4 200 v emitter-collector breakdown (bv eco ) 6 v i e = 100 m a collector-emitter dark current (i cer ) h11d1, h11d2 100 na v ce = 200v,r be =1m w 250 m a v ce = 200v,r be =1m w, t a =100c h11d3, h11d4 100 na v ce = 100v,r be =1m w 250 m a v ce = 100v,r be =1m w, t a =100c coupled current transfer ratio (ctr) 20 % 10ma i f , 10v v ce , r be = 1m w collector-emitter saturation voltagev ce(sat) 0.4 v 10ma i f , 0.5ma i c , r be = 1m w input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 w v io = 500v (note 1) turn-on time ton 5 m s v cc = 10v, i c = 2ma, turn-off time toff 5 m s r l = 100 w , fig 1 note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 14/2/03 electrical characteristics ( t a = 25c unless otherwise noted ) output output r l = 100 w input 10% 90% 90% 10% t on t r fig 1 v cc t off t f db91077m-aas/a2
14/2/03 100 ambient temperature t a ( c ) 300 0 400 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 40 50 -30 0 25 50 75 100 125 collector power dissipation vs. ambient temperature forward current vs. ambient temperature 200 forward current i f (ma) 70 80 -30 0 25 50 75 100 125 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 relative current transfer ratio relative current transfer ratio vs. ambient temperature 1 2 5 10 20 50 1.0 10 relative current transfer ratio forward current i f (ma) 0.1 0.01 0.8 1.0 -30 0 25 50 75 100 ambient temperature t a ( c ) 0 100 200 300 400 500 600 700 0.1 0.2 0.5 1 2 5 10 20 50 0.9 1.1 1.3 1.2 1.4 forward current i f (ma) forward voltage v f (v) v ce = 10v r be = 1m w t a = 25c relative current transfer ratio vs. forward current ( normalised to 10ma i f ) 1.6 1.8 2.0 2.2 2.4 -30 0 25 50 75 100 ambient temperature t a ( c ) 800 normalised to v ce = 10v , i f = 10ma , r be = 1m w , t a = 25c i f = 20ma i f = 10ma i f = 5ma collector-base current i cbo ( m a) collector-base current vs. ambient temperature forward voltage vs. forward current v cb = 10v i f = 50ma v cb = 200v i f = 10ma v cb = 10v i f = 5ma v cb = 10v i f = 10ma t a = -55c t a = +25c t a = +100c db91077m-aas/a2
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